Samsung, Hynix cooperate to develop next-generation semiconductors

SEOUL, June 25 (Xinhua) -- Samsung Electronics Co. and Hynix Semiconductor Inc., the world's two leading computer memory chip makers, said Wednesday that they will develop and standardize next-generation semiconductors by launching joint venture on spin-torque-transfer magnetic-random-access-memory (STT-MRAM) this September.

The companies said they intend to become the industry standard setters for the next generation 450mm wafer fab market, by conducting joint research and development of STT-MRAM chips.

The cooperative alliance, announced at a gathering of semiconductor companies and government policymakers in Seoul, will help to secure core basic technologies locally and will reduced the royalties paid to foreign companies, according to Samsung and Hynix.

They added that if the joint venture turns out successful, the companies will be able to prevent Japanese rivals from regaining dominance in the semiconductor sector and receive around 500 million dollars worth of royalty earnings.

Samsung and Hynix also said they will cooperate to establish worldwide industrial standards in the 450mm wafer sector, which is expected to replace the 300mm wafer, in August.

The concerted effort between businesses, research laboratories and the government will be centered on such areas as wafer parts, manufacturing equipment and materials, according to the companies.

Samsung and Hynix also added that they will further cooperate with U.S. industrial leaders JEDEC, SEMATECH and SEMI to establish technology standards.