The device, titled as Ferroelectric Random Access Memory, or FeRAM, has a 64-megabit storage capacity and can read and write 200 megabytes per second.

It is"the most advanced combination of performance and density yet achieved," Kyodo News quoted the company announcement as saying.

The chip, which shares flash memory's ability to retain data even when not powered and combines itself with the fast operating characteristics of DRAM, possesses such a high performance level because of the adoption of burst mode for high-speed data transfers, the company said.

Toshiba said it will boost its research and development in FeRAM for its wider use, including high-performance mobile digital equipment and computers. Enditem